Title :

Evidence of two plastic regimes controlled by dislocation nucleation in silicon nanostructures

Author(s) :

Godet, Julien [Auteur]
Hirel, Pierre [Auteur]
Brochard, Sandrine [Auteur]
Pizzagalli, Laurent [Auteur]

Journal title :

Journal of Applied Physics

Abbreviated title :

Journal of Applied Physics

Volume number :

105

Pages :

026104

Publisher :

AIP Publishing

Publication date :

2009-01-15

English abstract : [en]

We performed molecular dynamics simulations of silicon nanostructures submitted to various stresses and temperatures. For a given stress orientation, a transition in the onset of silicon plasticity is revealed depending ...
Show more >We performed molecular dynamics simulations of silicon nanostructures submitted to various stresses and temperatures. For a given stress orientation, a transition in the onset of silicon plasticity is revealed depending on the temperature and stress magnitude. At high temperature and low stress, partial dislocation loops are nucleated in the {111} glide set planes. But at low temperature and very high stress, perfect dislocation loops are formed in the other set of {111} planes called shuffle. This result confirmed by three different classical potentials suggests that plasticity in silicon nanostructures could be controlled by dislocation nucleation.Show less >

Audience :

Non spécifiée

Collections :

• Autres travaux scientifiques

Submission date :

2020-02-21T10:31:38Z