Dislocation nucleation from surface step ...
Type de document :
Article dans une revue scientifique
DOI :
URL permanente :
Titre :
Dislocation nucleation from surface step in silicon: The glide set versus the shuffle set
Auteur(s) :
Godet, Julien [Auteur]
Laboratoire de Physique des Matériaux [PhyMat]
Hirel, Pierre [Auteur]
Laboratoire de Physique des Matériaux [PhyMat]
Brochard, Sandrine [Auteur]
Laboratoire de Physique des Matériaux [PhyMat]
Pizzagalli, Laurent [Auteur]
Laboratoire de Physique des Matériaux [PhyMat]
Laboratoire de Physique des Matériaux [PhyMat]
Hirel, Pierre [Auteur]
Laboratoire de Physique des Matériaux [PhyMat]
Brochard, Sandrine [Auteur]
Laboratoire de Physique des Matériaux [PhyMat]
Pizzagalli, Laurent [Auteur]
Laboratoire de Physique des Matériaux [PhyMat]
Titre de la revue :
physica status solidi (a)
Nom court de la revue :
Phys. Status Solidi (a)
Numéro :
206
Pagination :
1885-1891
Éditeur :
Wiley
Date de publication :
2009-08
Discipline(s) HAL :
Chimie/Matériaux
Résumé en anglais : [en]
We have studied the mechanisms of dislocation nucleation from surface defects in silicon submitted to various stresses and temperatures. Molecular dynamics simulations with three classical potentials have shown the existence ...
Lire la suite >We have studied the mechanisms of dislocation nucleation from surface defects in silicon submitted to various stresses and temperatures. Molecular dynamics simulations with three classical potentials have shown the existence of two different plastic modes in silicon which can be activated from surfaces. At high temperatures and low stresses dislocations nucleation occurs in the {111} glide set planes, while at low temperatures and large stresses it occurs in the {111} shuffle set planes. The analysis of dislocation cores and kinks shows structures like those well known in bulk silicon. This study supports the idea that plasticity in crystalline Si structures could be governed by dislocation nucleation from surfaces.Lire moins >
Lire la suite >We have studied the mechanisms of dislocation nucleation from surface defects in silicon submitted to various stresses and temperatures. Molecular dynamics simulations with three classical potentials have shown the existence of two different plastic modes in silicon which can be activated from surfaces. At high temperatures and low stresses dislocations nucleation occurs in the {111} glide set planes, while at low temperatures and large stresses it occurs in the {111} shuffle set planes. The analysis of dislocation cores and kinks shows structures like those well known in bulk silicon. This study supports the idea that plasticity in crystalline Si structures could be governed by dislocation nucleation from surfaces.Lire moins >
Langue :
Anglais
Audience :
Non spécifiée
Collections :
Date de dépôt :
2020-02-21T10:32:43Z
2020-03-09T10:41:17Z
2020-03-09T10:44:12Z
2021-10-14T15:30:39Z
2020-03-09T10:41:17Z
2020-03-09T10:44:12Z
2021-10-14T15:30:39Z