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Now showing items 21-27 of 27
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Technological development towards high performance millimeter-wave GaN HEMTs and enhanced reliability
16th European Microwave Integrated Circuits Conference, EuMIC 2021, London, 03-04-2022 -
[Invited] High power-added-efficiency millimeter-wave GaN HEMTs[Invited]
GaN marathon 2022, Venice, 20-06-2022, 2022 -
[Workshop] Electronics
Ganex winter school on the physics and applications of nitrides, Autrans, 07-03-2022 -
Investigation on GaN channel thickness downscaling in high electron mobility transistor structures grown on AlN bulk substrate
WOCSDICE EXMATEC 2022, Ponta Delgada, 03-05-2022Communication dans un congrès avec actes -
Anisotropic mobility in AlGaN/GaN heterostructure with thin GaN on AlN/Sapphire template
WOCSDICE EXMATEC 2022, Ponta Delgada, 03-05-2022Communication dans un congrès avec actes -
Dual role of 3C-SiC interlayer on DC and RF isolation of GaN/Si-based devices
Applied Physics Letters, American Institute of Physics, 19-09-2022, 121; 12, 122103Compte-rendu et recension critique d'ouvrage -
[Invited] Status and progress of millimeter-wave GaN transistors for next generation high-power radar systems[Invited]
8th International Conference on Antennas and Electromagnetic Systems, AES 2022, Marrakesh, 24-05-2022