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Fabrication, characterization, and physical analysis of AlGaN/GaN HEMTs on flexible substrates
IEEE Transactions on Electron Devices, Institute of Electrical and Electronics Engineers, 2013, 60, 1054-1059Compte-rendu et recension critique d'ouvrage -
Sb-HEMT : toward 100-mV cryogenics electronics
IEEE Transactions on Electron Devices, Institute of Electrical and Electronics Engineers, 2010, 57, 1903-1909Compte-rendu et recension critique d'ouvrage -
Revisited RF compact model of gate resistance suitable for high-K/metal gate technology
IEEE Transactions on Electron Devices, Institute of Electrical and Electronics Engineers, 2013, 60, 13-19Compte-rendu et recension critique d'ouvrage -
Optimization of Al0.29Ga0.71N/GaN high electron mobility heterostructures for high-power/frequency performances
IEEE Transactions on Electron Devices, Institute of Electrical and Electronics Engineers, 2013, 60, 3105-3111Compte-rendu et recension critique d'ouvrage -
Robust surface-potential-based compact model for GaN HEMT IC design
IEEE Transactions on Electron Devices, Institute of Electrical and Electronics Engineers, 2013, 60, 3216-3222Compte-rendu et recension critique d'ouvrage -
Submicrometer InP/InGaAs DHBT Architecture Enhancements Targeting Reliability Improvements
IEEE Transactions on Electron Devices, Institute of Electrical and Electronics Engineers, 2013, 60; 3, 1068-1074Compte-rendu et recension critique d'ouvrage -
Short-channel effect immunity and current capability of sub-0.1-micron MOSFET's using a recessed channel
IEEE Transactions on Electron Devices, Institute of Electrical and Electronics Engineers, 08-1996, 43; 8, 1251-1255Compte-rendu et recension critique d'ouvrage -
Fabrication and characterization of an epitaxial graphene nanoribbon-based field-effect transistor
IEEE Transactions on Electron Devices, Institute of Electrical and Electronics Engineers, 2011, 58, 1594-1596Compte-rendu et recension critique d'ouvrage -
Monte Carlo study of the dynamic performance of a 100-nm-gate InAlAs/InGaAs velocity modulation transistor
IEEE Transactions on Electron Devices, Institute of Electrical and Electronics Engineers, 2010, 57, 2572-2578Compte-rendu et recension critique d'ouvrage -
Visual pattern extraction using energy-efficient ''2-PCM synapse'' neuromorphic architecture
IEEE Transactions on Electron Devices, Institute of Electrical and Electronics Engineers, 2012, 59, 2206-2214Compte-rendu et recension critique d'ouvrage