AlGaN channel high electron mobility transistors with regrown ohmic contacts

Abid, Idriss; Mehta, Jash Rinku; Cordier, Yvon; Derluyn, Joff; Degroote, Stefan; Miyake, Hideto; Medjdoub, Farid

Type de document :

Compte-rendu et recension critique d'ouvrage

DOI :

10.3390/electronics10060635

Titre :

AlGaN channel high electron mobility transistors with regrown ohmic contacts

Auteur(s) :

Abid, Idriss [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Mehta, Jash Rinku [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Cordier, Yvon [Auteur]
Centre de recherche sur l'hétéroepitaxie et ses applications [CRHEA]
Derluyn, Joff [Auteur]
SOITEC
Degroote, Stefan [Auteur]
SOITEC
Miyake, Hideto [Auteur]
Medjdoub, Farid [Auteur]

WIde baNd gap materials and Devices - IEMN [WIND - IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]

Titre de la revue :

Electronics

Pagination :

635

Éditeur :

MDPI

Date de publication :

2021-03-10

ISSN :

2079-9292

Mot(s)-clé(s) en anglais :

Ultra-wide BandGap
HEMTs transistors

Discipline(s) HAL :

Sciences de l'ingénieur [physics]

Résumé en anglais : [en]

High power electronics using wide bandgap materials are maturing rapidly, and significantmarket growth is expected in a near future. Ultra wide bandgap materials, which have an even largerbandgap than GaN (3.4 eV), represent ...
Lire la suite >High power electronics using wide bandgap materials are maturing rapidly, and significantmarket growth is expected in a near future. Ultra wide bandgap materials, which have an even largerbandgap than GaN (3.4 eV), represent an attractive choice of materials to further push the performancelimits of power devices. In this work, we report on the fabrication of AlN/AlGaN/AlN high-electronmobility transistors (HEMTs) using 50% Al-content on the AlGaN channel, which has a much widerbandgap than the commonly used GaN channel. The structure was grown by metalorganic chemicalvapor deposition (MOCVD) on AlN/sapphire templates. A buffer breakdown field as high as5.5 MV/cm was reported for short contact distances. Furthermore, transistors have been successfullyfabricated on this heterostructure, with low leakage current and low on-resistance. A remarkablethree-terminal breakdown voltage above 4 kV with an off-state leakage current below 1μA/mm wasachieved. A regrown ohmic contact was used to reduce the source/drain ohmic contact resistance,yielding a drain current density of about 0.1Lire moins >

Langue :

Anglais

Vulgarisation :

Non

Projet ANR :

Matériaux à ultra large bande interdite pour les futurs applications d'électronique de puissance
Réseau national sur GaN

Collections :