Free-carrier mobility in GaN in the presence of dislocation walls

Farvacque, J.-L.; Bougrioua, Zahia; Moerman, I.

Type de document :

Compte-rendu et recension critique d'ouvrage

DOI :

10.1103/PhysRevB.63.115202

Titre :

Free-carrier mobility in GaN in the presence of dislocation walls

Auteur(s) :

Farvacque, J.-L. [Auteur]
Université de Lille, Sciences et Technologies
Bougrioua, Zahia [Auteur]

Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Moerman, I. [Auteur]

Titre de la revue :

Physical Review B

Éditeur :

American Physical Society

Date de publication :

2001-02

ISSN :

2469-9950

Discipline(s) HAL :

Physique [physics]

Résumé en anglais : [en]

The free-carrier mobility versus carrier density in n-type GaN grown by low-pressure metal-organic vapor- phase epitaxy on a sapphire substrate experiences a particular behavior that consists of the appearance of a sharp ...
Lire la suite >The free-carrier mobility versus carrier density in n-type GaN grown by low-pressure metal-organic vapor- phase epitaxy on a sapphire substrate experiences a particular behavior that consists of the appearance of a sharp transition separating a low- from a high-mobility regime. This separation appears as soon as the carrier density exceeds a critical value that depends on the growth process. Using low-field electrical transport simulations, we show that this particular mobility behavior cannot be simply interpreted in terms of dislocation scattering or trapping mechanisms, but that it is also controlled by the collective effect of dislocation walls (the columnar structure). As the free-carrier density increases, the more efficient screening properties result in the transition from a barrier-controlled mobility regime to a pure-diffusion-process-controlled mobility regime. The model permits us to reproduce the experimental mobility collapse quantitatively.Lire moins >

Langue :

Anglais

Vulgarisation :

Non

Collections :

Institut d'Électronique, de Microélectronique et de Nanotechnologie (IEMN) - UMR 8520

Source :

Harvested from HAL

Free-carrier mobility in GaN in the presence ... BibTeX CSV Excel RIS

Free-carrier mobility in GaN in the presence ...

BibTeX

CSV

Excel

RIS