Magnetic-Phase Dependence of the Spin ...
Document type :
Article dans une revue scientifique: Article original
Title :
Magnetic-Phase Dependence of the Spin Carrier Mean Free Path in Graphene Nanoribbons
Author(s) :
Li, Jing [Auteur]
Laboratory of Atomistic Simulation [LSIM ]
Niquet, Yann-Michel [Auteur]
Laboratory of Atomistic Simulation [LSIM ]
Delerue, Christophe [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Laboratory of Atomistic Simulation [LSIM ]
Niquet, Yann-Michel [Auteur]
Laboratory of Atomistic Simulation [LSIM ]
Delerue, Christophe [Auteur]

Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Journal title :
Physical Review Letters
Pages :
236602
Publisher :
American Physical Society
Publication date :
2016
ISSN :
0031-9007
English keyword(s) :
Epitaxial Graphene
Magnetoresistance
Magnetoresistance
HAL domain(s) :
Physique [physics]
English abstract : [en]
We show theoretically that the intrinsic (phonon-limited) carrier mobility in graphene nanoribbons is considerably influenced by the presence of spin-polarized edge states. When the coupling between opposite edges switches ...
Show more >We show theoretically that the intrinsic (phonon-limited) carrier mobility in graphene nanoribbons is considerably influenced by the presence of spin-polarized edge states. When the coupling between opposite edges switches from antiferromagnetic to ferromagnetic with increasing carrier density, the current becomes spin polarized and the mean free path rises from 10 nm to micrometers. In the ferromagnetic state, the current flows through one majority-spin channel which is ballistic over micrometers and several minority-spin channels with mean free paths as low as 1 nm. These features predicted in technology-relevant conditions could be nicely exploited in spintronic devices.Show less >
Show more >We show theoretically that the intrinsic (phonon-limited) carrier mobility in graphene nanoribbons is considerably influenced by the presence of spin-polarized edge states. When the coupling between opposite edges switches from antiferromagnetic to ferromagnetic with increasing carrier density, the current becomes spin polarized and the mean free path rises from 10 nm to micrometers. In the ferromagnetic state, the current flows through one majority-spin channel which is ballistic over micrometers and several minority-spin channels with mean free paths as low as 1 nm. These features predicted in technology-relevant conditions could be nicely exploited in spintronic devices.Show less >
Language :
Anglais
Peer reviewed article :
Oui
Audience :
Internationale
Popular science :
Non
Source :