Titre :

Synthesis and characterization of BNT thin films

Auteur(s) :

Abou Dargham, Sara [Auteur]
Jabbour, Jihane [Auteur]
Zaatar, Youssef [Auteur]
Assaad, Jamal [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Khoury, Antonio [Auteur]
Remiens, Denis [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Zaouk, Doumit [Auteur]

Titre de la manifestation scientifique :

Lebanese Association for the Advancement of Science 20th International Science Conference, LAAS 20

Ville :

Hadath

Pays :

Liban

Date de début de la manifestation scientifique :

2014

Titre de l’ouvrage :

Proceedings of Lebanese Association for the Advancement of Science 20th International Science Conference, LAAS 20

Date de publication :

2014

Discipline(s) HAL :

Sciences de l'ingénieur [physics]

Résumé en anglais : [en]

Polycrystalline piezoelectric lead-free Bi0.5Na0.5TiO3 (abbreviated as BNT) thin films were deposited on glass substrates by an optimized Sol-Gel process using the Electrospray technique. X-ray Diffraction (XRD) analysis ...
Lire la suite >Polycrystalline piezoelectric lead-free Bi0.5Na0.5TiO3 (abbreviated as BNT) thin films were deposited on glass substrates by an optimized Sol-Gel process using the Electrospray technique. X-ray Diffraction (XRD) analysis showed that after heating the films at 650˚C for 1 hour, dense and well crystallized BNT films in the rhombohedral perovskite phase were formed. Polyhedral shaped primary particles, with an average size of approximately 200 nm and a smooth surface of 1.8 nm average roughness (Ra), were detected using AFM analysis. The deconvolution of Raman spectrum had confirmed our first results of XRD about the crystallization of BNT films due to the appearance of Raman peaks corresponding to the bending vibrations of Bi-O, Na-O and TiO6 bonds.Lire moins >

Langue :

Anglais

Comité de lecture :

Oui

Audience :

Non spécifiée

Vulgarisation :

Non

Collections :

• Institut d'Électronique, de Microélectronique et de Nanotechnologie (IEMN) - UMR 8520

Source :

Harvested from HAL