Titre :

A 1 GHz SAW oscillator on epitaxial GaN/Si substrate : toward co-integrated frequency sources

Auteur(s) :

Faucher, Marc [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Martin, G. [Auteur]
Franche-Comté Électronique Mécanique, Thermique et Optique - Sciences et Technologies (UMR 6174) [FEMTO-ST]
Friedt, J.M. [Auteur]
Ballandras, S. [Auteur]
Franche-Comté Électronique Mécanique, Thermique et Optique - Sciences et Technologies (UMR 6174) [FEMTO-ST]

Titre de la manifestation scientifique :

6th Joint IEEE International Frequency Control Symposium/European Frequency and Time Forum, IFCS-EFTF 2013

Ville :

Prague

Pays :

République tchèque

Date de début de la manifestation scientifique :

2013

Titre de l’ouvrage :

Proceedings of 6th Joint IEEE International Frequency Control Symposium/European Frequency and Time Forum, IFCS-EFTF 2013

Date de publication :

2013

Mot(s)-clé(s) en anglais :

RF oscillator
SAW resonator
epitaxial GaN
silicon (111)
layered substrate

Résumé en anglais : [en]

GaN is an attractive material for the fabrication of various integrated devices combining several physical effects (semi-conductors, piezoelectric and optic parts, etc.). This work is dedicated to the investigation of GaN ...
Lire la suite >GaN is an attractive material for the fabrication of various integrated devices combining several physical effects (semi-conductors, piezoelectric and optic parts, etc.). This work is dedicated to the investigation of GaN for the fabrication of surface acoustic wave oscillators. The first functional two-port resonators have been designed and built on 1.8 μm thick GaN epitaxial layers grown on (111) Silicon. An analysis of the obtained results has been achieved and a set of elastic constants has been fitted to meet the best possible agreement between theory and experiments. Comparison between experimental and theoretical transfer functions has been also exploited to refine the estimation of the wave characteristics. An oscillator has been finally built using the obtained resonators to assess the interest of this material for this kind of application and to prepare future development on this basis.Lire moins >

Langue :

Anglais

Comité de lecture :

Oui

Audience :

Non spécifiée

Vulgarisation :

Non

Collections :

• Institut d'Électronique, de Microélectronique et de Nanotechnologie (IEMN) - UMR 8520

Source :

Harvested from HAL