Arsenic-segregated rare earth silicide ...
Document type :
Compte-rendu et recension critique d'ouvrage
DOI :
Title :
Arsenic-segregated rare earth silicide junctions : reduction of Schottky barrier and integration in metallic n-MOSFETs on SOI
Author(s) :
Larrieu, G. [Auteur]
Microélectronique Silicium - IEMN [MICROELEC SI - IEMN]
Yarekha, Dmytro [Auteur]
Microélectronique Silicium - IEMN [MICROELEC SI - IEMN]
Dubois, Emmanuel [Auteur]
Microélectronique Silicium - IEMN [MICROELEC SI - IEMN]
Breil, N. [Auteur]
IBM
Faynot, Olivier [Auteur]
Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information [CEA-LETI]
Microélectronique Silicium - IEMN [MICROELEC SI - IEMN]
Yarekha, Dmytro [Auteur]
Microélectronique Silicium - IEMN [MICROELEC SI - IEMN]
Dubois, Emmanuel [Auteur]
Microélectronique Silicium - IEMN [MICROELEC SI - IEMN]
Breil, N. [Auteur]
IBM
Faynot, Olivier [Auteur]
Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information [CEA-LETI]
Journal title :
IEEE Electron Device Letters
Pages :
1266-1268
Publisher :
Institute of Electrical and Electronics Engineers
Publication date :
2009
ISSN :
0741-3106
HAL domain(s) :
Sciences de l'ingénieur [physics]/Electronique
English abstract : [en]
As an attempt to considerably reduce the equivalent contact resistivity of Schottky junctions, this letter studies the integration of rare-earth silicides, known to feature the lowest Schottky barriers (SBs) to electrons, ...
Show more >As an attempt to considerably reduce the equivalent contact resistivity of Schottky junctions, this letter studies the integration of rare-earth silicides, known to feature the lowest Schottky barriers (SBs) to electrons, coupled with a dopant segregation based on arsenic (As$^+$) implantation. Both erbium (Er) and ytterbium (Yb) have been considered in the implant-before-silicide (IBS) and implant-to-silicide flavors. It is shown that the two schemes coupled with a limited thermal budget (500°C) produce an SB below the target of 0.1 eV. The implementation of IBS arsenic-segregated YbSi$_{1.8}$ junctions in an n-type SB-MOSFET is demonstrated for the first time resulting in a current-drive improvement of more than one decade over the dopant-free counterpart.Show less >
Show more >As an attempt to considerably reduce the equivalent contact resistivity of Schottky junctions, this letter studies the integration of rare-earth silicides, known to feature the lowest Schottky barriers (SBs) to electrons, coupled with a dopant segregation based on arsenic (As$^+$) implantation. Both erbium (Er) and ytterbium (Yb) have been considered in the implant-before-silicide (IBS) and implant-to-silicide flavors. It is shown that the two schemes coupled with a limited thermal budget (500°C) produce an SB below the target of 0.1 eV. The implementation of IBS arsenic-segregated YbSi$_{1.8}$ junctions in an n-type SB-MOSFET is demonstrated for the first time resulting in a current-drive improvement of more than one decade over the dopant-free counterpart.Show less >
Language :
Anglais
Popular science :
Non
Source :
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