Critical thickness for InAs quantum dot formation on (311)B InP substrates

Caroff, Philippe; Bertru, N.; Lu, W.; Elias, G.; Dehaese, O.; Létoublon, Antoine; Le Corre, A.

Type de document :

Article dans une revue scientifique: Article original

DOI :

10.1016/j.jcrysgro.2009.02.048

Titre :

Critical thickness for InAs quantum dot formation on (311)B InP substrates

Auteur(s) :

Caroff, Philippe [Auteur]
Institut National des Sciences Appliquées - Rennes [INSA Rennes]
Bertru, N. [Auteur]
Institut National des Sciences Appliquées - Rennes [INSA Rennes]
Lu, W. [Auteur]
Institut National des Sciences Appliquées - Rennes [INSA Rennes]
Elias, G. [Auteur]
Institut National des Sciences Appliquées - Rennes [INSA Rennes]
Dehaese, O. [Auteur]
Institut National des Sciences Appliquées - Rennes [INSA Rennes]
Létoublon, Antoine [Auteur]
Institut National des Sciences Appliquées - Rennes [INSA Rennes]
Le Corre, A. [Auteur]
Institut National des Sciences Appliquées - Rennes [INSA Rennes]

Titre de la revue :

Journal of Crystal Growth

Pagination :

2626-2629

Éditeur :

Elsevier

Date de publication :

2009

ISSN :

0022-0248

Discipline(s) HAL :

Sciences de l'ingénieur [physics]

Résumé en anglais : [en]

We report on the critical thickness for InAs quantum dot (QD) formation on (3 1 1)B InP substrates. Firstly, critical thicknesses for InAs QD formation on InP surfaces have been measured by reflection high-energy electron ...
Lire la suite >We report on the critical thickness for InAs quantum dot (QD) formation on (3 1 1)B InP substrates. Firstly, critical thicknesses for InAs QD formation on InP surfaces have been measured by reflection high-energy electron diffraction. Large change of the critical thickness has been observed as a function of substrate temperature. We assume that is related to large As/P exchange on InP surface which leads to the formation of extra InAs on surface. Then, change of critical thickness during QD stacking has been investigated. When capping layers were grown continuously a large decrease of the critical thickness was observed as a function of the number of QD layers. In contrast, when capping layers were grown in two steps (double cap procedure) a nearly constant critical thickness was measured. We propose an explanation based on stress-driven mass transport and As/P exchange on InP surface to interpret such results.Lire moins >

Langue :

Anglais

Comité de lecture :

Oui

Audience :

Internationale

Vulgarisation :

Non

Collections :

Institut d'Électronique, de Microélectronique et de Nanotechnologie (IEMN) - UMR 8520

Source :

Harvested from HAL

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