RF small signal analysis of Schottky-barrier ...
Document type :
Compte-rendu et recension critique d'ouvrage
DOI :
Title :
RF small signal analysis of Schottky-barrier p-MOSFETs
Author(s) :
Valentin, R. [Auteur]
Microélectronique Silicium - IEMN [MICROELEC SI - IEMN]
Dubois, Emmanuel [Auteur]
Microélectronique Silicium - IEMN [MICROELEC SI - IEMN]
Raskin, J.P. [Auteur]
Université Catholique de Louvain = Catholic University of Louvain [UCL]
Larrieu, G. [Auteur]
Microélectronique Silicium - IEMN [MICROELEC SI - IEMN]
Dambrine, Gilles [Auteur]
Advanced NanOmeter DEvices - IEMN [ANODE - IEMN]
Lim, T.C. [Auteur]
Advanced NanOmeter DEvices - IEMN [ANODE - IEMN]
Breil, N. [Auteur]
Microélectronique Silicium - IEMN [MICROELEC SI - IEMN]
Danneville, François [Auteur]
Advanced NanOmeter DEvices - IEMN [ANODE - IEMN]
Microélectronique Silicium - IEMN [MICROELEC SI - IEMN]
Dubois, Emmanuel [Auteur]
Microélectronique Silicium - IEMN [MICROELEC SI - IEMN]
Raskin, J.P. [Auteur]
Université Catholique de Louvain = Catholic University of Louvain [UCL]
Larrieu, G. [Auteur]
Microélectronique Silicium - IEMN [MICROELEC SI - IEMN]
Dambrine, Gilles [Auteur]
Advanced NanOmeter DEvices - IEMN [ANODE - IEMN]
Lim, T.C. [Auteur]
Advanced NanOmeter DEvices - IEMN [ANODE - IEMN]
Breil, N. [Auteur]
Microélectronique Silicium - IEMN [MICROELEC SI - IEMN]
Danneville, François [Auteur]
Advanced NanOmeter DEvices - IEMN [ANODE - IEMN]
Journal title :
IEEE Transactions on Electron Devices
Pages :
1192-1202
Publisher :
Institute of Electrical and Electronics Engineers
Publication date :
2008
ISSN :
0018-9383
HAL domain(s) :
Sciences de l'ingénieur [physics]
English abstract : [en]
This paper presents a detailed RF study for source/drain Schottky-barrier (SB) MOSFETs. Using on-wafer -parameters, high-frequency (HF) figures-of-merit (FoMs) and small-signal equivalent circuits (SSEC) are first extracted ...
Show more >This paper presents a detailed RF study for source/drain Schottky-barrier (SB) MOSFETs. Using on-wafer -parameters, high-frequency (HF) figures-of-merit (FoMs) and small-signal equivalent circuits (SSEC) are first extracted and discussed for a -gate-length SB MOSFET. Then, using ac simulations, HF FoM's sensitivity along SB height and underlap length variations are subsequently presented. The whole study provides, for SB MOSFETs, a deep understanding of key ac-element (transconductances and capacitances) behavior as well as process-parameter optimization to achieve the best HF FoMs.Show less >
Show more >This paper presents a detailed RF study for source/drain Schottky-barrier (SB) MOSFETs. Using on-wafer -parameters, high-frequency (HF) figures-of-merit (FoMs) and small-signal equivalent circuits (SSEC) are first extracted and discussed for a -gate-length SB MOSFET. Then, using ac simulations, HF FoM's sensitivity along SB height and underlap length variations are subsequently presented. The whole study provides, for SB MOSFETs, a deep understanding of key ac-element (transconductances and capacitances) behavior as well as process-parameter optimization to achieve the best HF FoMs.Show less >
Language :
Anglais
Popular science :
Non
Source :
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