Titre :

Low-frequency dynamic drain current modeling in AlGaN-GaN HEMTs

Auteur(s) :

Di Giacomo, Valeria [Auteur]
Università degli Studi di Ferrara = University of Ferrara [UniFE]
Santarelli, Alberto [Auteur]
Alma Mater Studiorum Università di Bologna = University of Bologna [UNIBO]
Filicori, Fabio [Auteur]
Alma Mater Studiorum Università di Bologna = University of Bologna [UNIBO]
Raffo, Antonio [Auteur]
Università degli Studi di Ferrara = University of Ferrara [UniFE]
Vannini, Giorgio [Auteur]
Università degli Studi di Ferrara = University of Ferrara [UniFE]
Aubry, Raphaël [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Gaquiere, Christophe [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]

Titre de la manifestation scientifique :

2nd European Microwave Integrated Circuits Conference, EuMIC 2007

Ville :

Munich

Pays :

Allemagne

Date de début de la manifestation scientifique :

2007-10-08

Titre de l’ouvrage :

Proceedings of the 2nd European Microwave Integrated Circuits Conference, EuMIC 2007

Éditeur :

IEEE, Piscataway, NJ, USA

Date de publication :

2007

Mot(s)-clé(s) en anglais :

Aluminum gallium nitride
HEMTs
MODFETs
Dispersion
Gallium nitride
Cutoff frequency
Gallium arsenide
PHEMTs
Extrapolation
Computational modeling

Discipline(s) HAL :

Sciences de l'ingénieur [physics]

Résumé en anglais : [en]

Low-frequency dispersive effects in AlGaN/GaN HEMTs are here modeled above their cutoff frequencies by adopting a modeling approach developed for GaAs PHEMTs. To this aim, a new identification procedure is proposed, which ...
Lire la suite >Low-frequency dispersive effects in AlGaN/GaN HEMTs are here modeled above their cutoff frequencies by adopting a modeling approach developed for GaAs PHEMTs. To this aim, a new identification procedure is proposed, which allows to obtain very accurate predictions of the pulsed drain currents, even in the presence of strong kink effects in the DC characteristics. In addition, a dedicated algorithm of data extrapolation is used, in order to make the model more computationally efficient.Lire moins >

Langue :

Anglais

Comité de lecture :

Oui

Audience :

Internationale

Vulgarisation :

Non

Collections :

• Institut d'Électronique, de Microélectronique et de Nanotechnologie (IEMN) - UMR 8520

Source :

Harvested from HAL