Titre :

Effects on linearity in Ka band of single or double recess PHEMTs

Auteur(s) :

Gaquiere, Christophe [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Bue-Erkmen, Frédéric [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Delemotte, Pascal [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Crosnier, Yves [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Carnez, Bernard [Auteur]
United Monolithic Semiconductors [UMS]
Pons, D. [Auteur]
United Monolithic Semiconductors [UMS]

Titre de la revue :

IEEE Microwave and Guided Wave Letters

Pagination :

267-269

Éditeur :

Institute of Electrical and Electronics Engineers (IEEE)

Date de publication :

2000-07

ISSN :

1051-8207

Mot(s)-clé(s) en anglais :

Linearity
Power generation
Voltage
Quadrature amplitude modulation
Impedance
Current density
Associate members
Topology
TV
Video on demand

Discipline(s) HAL :

Sciences de l'ingénieur [physics]

Résumé en anglais : [en]

The effects of the gate recess topologies on the linearity performance of PHEMT's have been investigated in the Ka band. The authors highlight the reasons why, at a given output power level, the double recessed device ...
Lire la suite >The effects of the gate recess topologies on the linearity performance of PHEMT's have been investigated in the Ka band. The authors highlight the reasons why, at a given output power level, the double recessed device exhibits a very large improvement of its intermodulation performance as its drain source bias voltage is increased whereas its linearity is inferior to that of the single recessed device at low drain source bias voltage. The effect of the load impedance on the linearity behavior has also been investigated. At a given output power the load impedance contour of the double recess structure is shown to exhibit a much larger variation of the intermodulation ratio than that of the single recess structure.Lire moins >

Langue :

Anglais

Vulgarisation :

Non

Collections :

• Institut d'Électronique, de Microélectronique et de Nanotechnologie (IEMN) - UMR 8520

Source :

Harvested from HAL