Frequency difference generation in the ...
Type de document :
Autre communication scientifique (congrès sans actes - poster - séminaire...): Communication dans un congrès avec actes
Titre :
Frequency difference generation in the terahertz region using LTG-GaAs photodetector
Auteur(s) :
Peytavit, Emilien [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Mouret, Gaël [Auteur]
Laboratoire de Physico-Chimie de l'Atmosphère [LPCA]
Lampin, Jean-Francois [Auteur]
Masselin, Pascal [Auteur]
Laboratoire de Physico-Chimie de l'Atmosphère [LPCA]
Mounaix, P. [Auteur]
Mollot, F. [Auteur]
Lippens, D. [Auteur]

Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Mouret, Gaël [Auteur]
Laboratoire de Physico-Chimie de l'Atmosphère [LPCA]
Lampin, Jean-Francois [Auteur]

Masselin, Pascal [Auteur]
Laboratoire de Physico-Chimie de l'Atmosphère [LPCA]
Mounaix, P. [Auteur]
Mollot, F. [Auteur]
Lippens, D. [Auteur]
Titre de la manifestation scientifique :
8th International Conference on Terahertz Electronics
Ville :
Darmstadt
Pays :
Allemagne
Date de début de la manifestation scientifique :
2000-09-28
Mot(s)-clé(s) en anglais :
Terahertz
photomixing
LTG GaAs
photomixing
LTG GaAs
Discipline(s) HAL :
Sciences de l'ingénieur [physics]
Résumé en anglais : [en]
We demonstrated Terahertz generation by optical frequency difference with a continuous tuning between 0.2 1 micro W and 3 THz 1 nW. To this aim, high speed photodetectors with an interdigited photoconductor scheme on a ...
Lire la suite >We demonstrated Terahertz generation by optical frequency difference with a continuous tuning between 0.2 1 micro W and 3 THz 1 nW. To this aim, high speed photodetectors with an interdigited photoconductor scheme on a submicron scale, loaded by THz log-periodic antennas, were deposited on a 1 micrometer-thick Low Temperature Grown 200 deg C GaAs epilayer. Two TiSapphire laser beams 30 mW focused onto the device yield Terahertz radiation collimated through Silicon lens and detected by means of lock-in bolometer detection. The generated power and frequency, consistent with semiconductor and circuit time constants, are discussed in the prospects of antenna arrays and optical cavities.Lire moins >
Lire la suite >We demonstrated Terahertz generation by optical frequency difference with a continuous tuning between 0.2 1 micro W and 3 THz 1 nW. To this aim, high speed photodetectors with an interdigited photoconductor scheme on a submicron scale, loaded by THz log-periodic antennas, were deposited on a 1 micrometer-thick Low Temperature Grown 200 deg C GaAs epilayer. Two TiSapphire laser beams 30 mW focused onto the device yield Terahertz radiation collimated through Silicon lens and detected by means of lock-in bolometer detection. The generated power and frequency, consistent with semiconductor and circuit time constants, are discussed in the prospects of antenna arrays and optical cavities.Lire moins >
Langue :
Anglais
Comité de lecture :
Oui
Audience :
Non spécifiée
Vulgarisation :
Non
Source :