Bias-dependence of surface charge at low temperature in GaN self-switching diodes

Perez-Martin, E.; Iniguez-De-La-Torre, I.; Gonzalez, T.; Gaquiere, Christophe; Mateos, J.

Document type :

Communication dans un congrès avec actes

DOI :

10.1109/CDE52135.2021.9455737

Title :

Bias-dependence of surface charge at low temperature in GaN self-switching diodes

Author(s) :

Perez-Martin, E. [Auteur]
Iniguez-De-La-Torre, I. [Auteur]
Gonzalez, T. [Auteur]
Gaquiere, Christophe [Auteur]

Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Puissance - IEMN [PUISSANCE - IEMN]
Mateos, J. [Auteur]

Conference title :

13th Spanish Conference on Electron Devices, CDE 2021

City :

Sevilla

Country :

Espagne

Start date of the conference :

2021-06-09

Book title :

2021 13th Spanish Conference on Electron Devices (CDE)

Publisher :

Institute of Electrical and Electronics Engineers Inc.

Publication date :

2021

English keyword(s) :

Gallium Nitride
Monte Carlo simulation
Self-Switching Diode
surface effects

HAL domain(s) :

Sciences de l'ingénieur [physics]

English abstract : [en]

In this work, with the help of a semi-classical two-dimensional Monte Carlo (MC) simulator, we study the DC current-voltage curves of Self-Switching Diodes (SSDs) fabricated on an AlGaN/GaN heterostructure from 100 K up ...
Show more >In this work, with the help of a semi-classical two-dimensional Monte Carlo (MC) simulator, we study the DC current-voltage curves of Self-Switching Diodes (SSDs) fabricated on an AlGaN/GaN heterostructure from 100 K up to room temperature. Due to the very narrow channel of the SSDs, the presence of surface effects plays a key role not only on their DC behavior but also on their RF detection performance. The evolution with temperature of the negative surface charge density σ at the etched sidewalls of the SSD is the key quantity to explain the measurements. At 300 K, MC simulations with a constant value of σ are able to replicate very satisfactorily the experiments. However, to reproduce the shape of the I-V curve at low temperatures, a more realistic approach, where σ depends not only on T, but also on the applied bias V, is necessary.Show less >

Language :

Anglais

Peer reviewed article :

Oui

Audience :

Internationale

Popular science :

Non

Collections :

Institut d'Électronique, de Microélectronique et de Nanotechnologie (IEMN) - UMR 8520

Source :

Harvested from HAL

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