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TEM and LTPL Investigations of 3C-SiC Layers Grown by LPE on (100) and (111) 3C-SiC Seeds
Materials Science Forum, 2010, 645-648, 383-386Article dans une revue scientifique -
Structural and Optical Investigation of VLS Grown (111) 3C-SiC Layers on 6H-SiC Substrates in Sn-Based Melts
Materials Science Forum, 2011, 679-680, 165-168Article dans une revue scientifique -
Sublimation Growth and Structural Characterization of 3C-SiC on Hexagonal and Cubic SiC Seeds
Materials Science Forum, 2010, 645-648, 175-178Article dans une revue scientifique -
Influence of Post-Growth Annealing on the Defects Nature and Distribution in VLS Grown (111) 3C-SiC Layers
Materials Science Forum, 2011, 679-680, 241-244Article dans une revue scientifique -
Influence of Ga doping on the microstructure of 3C-SiC layers grown on 4H-SiC substrates by VLS mechanism
Physica Status Solidi (c), 2013, 10, 72-75Article dans une revue scientifique