GAP(111)B-SE Surface for TMD epitaxial growth

Document type :

Autre communication scientifique

Title :

GAP(111)B-SE Surface for TMD epitaxial growth

HAL domain(s) :

Physique [physics]

Language :

Anglais

ANR Project :

Diodes tunnel miniaturisables à base de matériaux 2D

Collections :

Institut d'Électronique, de Microélectronique et de Nanotechnologie (IEMN) - UMR 8520

Source :

Harvested from HAL

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