GAP(111)B-SE Surface for TMD epitaxial growth

Chapuis, Niels; Coinon, Christophe; Deresmes, D.; Wallart, Xavier

Type de document :

Autre communication scientifique (congrès sans actes - poster - séminaire...)

Titre :

GAP(111)B-SE Surface for TMD epitaxial growth

Auteur(s) :

Chapuis, Niels [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Coinon, Christophe [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Centrale de Micro Nano Fabrication - IEMN [CMNF - IEMN]
Deresmes, D. [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Plateforme de Caractérisation Multi-Physiques - IEMN [PCMP - IEMN]
Wallart, Xavier [Auteur]

Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
EPItaxie et PHYsique des hétérostructures - IEMN [EPIPHY - IEMN]

Titre de la manifestation scientifique :

GDR-IRN HOWDI 2022 Meeting

Ville :

Dourdan

Pays :

France

Date de début de la manifestation scientifique :

2022-05-09

Mot(s)-clé(s) en anglais :

TMD EPITAXIAL GROWTH
GAP(111)B-SE

Discipline(s) HAL :

Physique [physics]

Résumé en anglais : [en]

Over the past few years, 2D-Transition Metal Dichalcogenides (TMDs) have revealed great potential for optoelectronics and nanoelectronics devices, thanks to their exceptional properties, not encountered in other materials. ...
Lire la suite >Over the past few years, 2D-Transition Metal Dichalcogenides (TMDs) have revealed great potential for optoelectronics and nanoelectronics devices, thanks to their exceptional properties, not encountered in other materials. They can be grown by van der Waals epitaxy allowing the use of materials with significant mismatch. Van der Waals epitaxy is usually performed on 2D substrates such as graphene, hBN or mica but 3D substrates can also be used after a proper surface passivation treatment, which for III-V semiconductor substrates has been applied successfully on GaAs(111)B surfaces. Since rather high growth temperatures are needed in order to get high quality-TMD layers [1], GaP might represent an interesting alternative to GaAs considering its higher thermal stability. In this study, we present results relative to the preparation of n and p-type GaP(111)B surfaces and to their Selenium passivation.Lire moins >

Langue :

Anglais

Comité de lecture :

Oui

Audience :

Nationale

Vulgarisation :

Non

Projet ANR :

Diodes tunnel miniaturisables à base de matériaux 2D

Collections :