Titre :

Highly Si‐doped GaN regrown by MOVPE for ohmic contact applied to quaternary barrier based HEMT

Auteur(s) :

Pitaval, Charles [Auteur correspondant]
Puissance - IEMN [PUISSANCE - IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Alcatel-Thales III-V Lab [III-V Lab]
Lacam, Cédric [Auteur]
Alcatel-Thales III-V Lab [III-V Lab]
Defrance, Nicolas [Auteur]
Puissance - IEMN [PUISSANCE - IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Gaquiere, Christophe [Auteur]
Puissance - IEMN [PUISSANCE - IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Michel, Nicolas [Auteur]
Alcatel-Thales III-V Lab [III-V Lab]
Parillaud, Olivier [Auteur]
Alcatel-Thales III-V Lab [III-V Lab]
Thales Research and Technologies [Orsay] [TRT]
Delage, Sylvain [Auteur]
Alcatel-Thales III-V Lab [III-V Lab]

Titre de la revue :

Physica Status Solidi A (applications and materials science)

Pagination :

2200476

Éditeur :

Wiley

Date de publication :

2023-08

ISSN :

1862-6300

Mot(s)-clé(s) en anglais :

GaN
HEMT
ohmic contacts
Regrowth
Millimeter-wave

Discipline(s) HAL :

Physique [physics]
Sciences de l'ingénieur [physics]

Résumé en anglais : [en]

The quaternary barrier InAlGaN is suitable for GaN HEMT power microwave applications. High doping of semiconductor under the drain and source is a known suitable solution to achieve low ohmic contact resistance. However, ...
Lire la suite >The quaternary barrier InAlGaN is suitable for GaN HEMT power microwave applications. High doping of semiconductor under the drain and source is a known suitable solution to achieve low ohmic contact resistance. However, InAlGaN quaternary alloys require low thermal budget to avoid indium desorption from the active layer during regrowth and thus deteriorating the barrier. This article presents a selective area growth technique at 850 °C by MOVPE to achieve low contact resistance with respect of temperature constraint. Regrowth temperature and mask geometry were investigated to achieve selectivity and control of the regrowth rate. The use of H2 as carrier gas decomposes the GaN buffer layer and damages the surface creating material cluster during regrowth. Growth with N2 carrier gas shows non-selective epitaxy, as there are deposits on the entire surface of the dielectric mask. Switching from one carrier gas to another depending on the step in the MOVPE reactor helps to control both the morphology and selectivity. The resulting high doping levels of 8 × 1019 cm-3 leads to a low contact resistance of 0.26 Ω.mm.Lire moins >

Langue :

Anglais

Vulgarisation :

Non

Collections :

• Institut d'Électronique, de Microélectronique et de Nanotechnologie (IEMN) - UMR 8520

Source :

Harvested from HAL