Rietveld refinement combined with ...
Type de document :
Article dans une revue scientifique: Article original
URL permanente :
Titre :
Rietveld refinement combined with first-principles study of Zn and Al-Zn doped CdO thin films and their structural, optical and electrical characterisations
Auteur(s) :
Azzaoui, W. [Auteur]
جامعة جيلالي اليابس [سيدي بلعباس، الجزائر] = Université Djillali Liabès [Sidi Bel Abbès, Algérie] = Djillali Liabes University [Sidi Bel Abbès, Algeria] [UDL]
Medles, M. [Auteur]
جامعة جيلالي اليابس [سيدي بلعباس، الجزائر] = Université Djillali Liabès [Sidi Bel Abbès, Algérie] = Djillali Liabes University [Sidi Bel Abbès, Algeria] [UDL]
Miloua, R. [Auteur]
Université Ibn Khaldoun de Tiaret = University of Tiaret
جامعة جيلالي اليابس [سيدي بلعباس، الجزائر] = Université Djillali Liabès [Sidi Bel Abbès, Algérie] = Djillali Liabes University [Sidi Bel Abbès, Algeria] [UDL]
Nakrela, A. [Auteur]
جامعة جيلالي اليابس [سيدي بلعباس، الجزائر] = Université Djillali Liabès [Sidi Bel Abbès, Algérie] = Djillali Liabes University [Sidi Bel Abbès, Algeria] [UDL]
Bouzidi, A. [Auteur]
جامعة جيلالي اليابس [سيدي بلعباس، الجزائر] = Université Djillali Liabès [Sidi Bel Abbès, Algérie] = Djillali Liabes University [Sidi Bel Abbès, Algeria] [UDL]
Khadraoui, M. [Auteur]
جامعة جيلالي اليابس [سيدي بلعباس، الجزائر] = Université Djillali Liabès [Sidi Bel Abbès, Algérie] = Djillali Liabes University [Sidi Bel Abbès, Algeria] [UDL]
Da Costa, Antonio [Auteur]
Unité de Catalyse et Chimie du Solide (UCCS) - UMR 8181
Huvé, Marielle [Auteur]
Unité de Catalyse et Chimie du Solide - UMR 8181 [UCCS]
Bessuelle, F. [Auteur]
Institut des Sciences Analytiques [ISA]
Desfeux, Rachel [Auteur]
Unité de Catalyse et Chimie du Solide - UMR 8181 [UCCS]
جامعة جيلالي اليابس [سيدي بلعباس، الجزائر] = Université Djillali Liabès [Sidi Bel Abbès, Algérie] = Djillali Liabes University [Sidi Bel Abbès, Algeria] [UDL]
Medles, M. [Auteur]
جامعة جيلالي اليابس [سيدي بلعباس، الجزائر] = Université Djillali Liabès [Sidi Bel Abbès, Algérie] = Djillali Liabes University [Sidi Bel Abbès, Algeria] [UDL]
Miloua, R. [Auteur]
Université Ibn Khaldoun de Tiaret = University of Tiaret
جامعة جيلالي اليابس [سيدي بلعباس، الجزائر] = Université Djillali Liabès [Sidi Bel Abbès, Algérie] = Djillali Liabes University [Sidi Bel Abbès, Algeria] [UDL]
Nakrela, A. [Auteur]
جامعة جيلالي اليابس [سيدي بلعباس، الجزائر] = Université Djillali Liabès [Sidi Bel Abbès, Algérie] = Djillali Liabes University [Sidi Bel Abbès, Algeria] [UDL]
Bouzidi, A. [Auteur]
جامعة جيلالي اليابس [سيدي بلعباس، الجزائر] = Université Djillali Liabès [Sidi Bel Abbès, Algérie] = Djillali Liabes University [Sidi Bel Abbès, Algeria] [UDL]
Khadraoui, M. [Auteur]
جامعة جيلالي اليابس [سيدي بلعباس، الجزائر] = Université Djillali Liabès [Sidi Bel Abbès, Algérie] = Djillali Liabes University [Sidi Bel Abbès, Algeria] [UDL]
Da Costa, Antonio [Auteur]

Unité de Catalyse et Chimie du Solide (UCCS) - UMR 8181
Huvé, Marielle [Auteur]

Unité de Catalyse et Chimie du Solide - UMR 8181 [UCCS]
Bessuelle, F. [Auteur]
Institut des Sciences Analytiques [ISA]
Desfeux, Rachel [Auteur]

Unité de Catalyse et Chimie du Solide - UMR 8181 [UCCS]
Titre de la revue :
Journal of Materials Science: Materials in Electronics
Nom court de la revue :
J Mater Sci: Mater Electron
Numéro :
34
Pagination :
1010
Éditeur :
Springer Verlag
Date de publication :
2023-04-21
ISSN :
0957-4522
Discipline(s) HAL :
Chimie/Chimie inorganique
Résumé en anglais : [en]
Un-doped, Zn-doped, and Al–Zn co-doped CdO thin films were deposited onto glass substrates at 350 °C by spray pyrolysis. X-ray diffraction (XRD) analysis was conducted to investigate the structural properties of the films. ...
Lire la suite >Un-doped, Zn-doped, and Al–Zn co-doped CdO thin films were deposited onto glass substrates at 350 °C by spray pyrolysis. X-ray diffraction (XRD) analysis was conducted to investigate the structural properties of the films. The XRD patterns confirmed that all the films crystallize in a cubic structure and that the addition of Zn and Al did not alter the CdO crystal structure. Energy-dispersive X-ray spectroscopy analysis further confirmed the successful incorporation of Zn and Al into the CdO films. Theoretical calculations based on first-principles were performed, and crystallographic information files (CIF) were obtained for optimized theoretical supercells in space group Pm3-m. The CIF files were used as input for experimental XRD spectra Rietveld refinement, to determine the Wyckoff positions of the dopants and their occupation rates. The optical properties of the films were characterized using transmittance measurements in the wavelength range of 300–1700 nm. The optical data indicated an increase in the average transmittance from 60 to 70% within the wavelength range of 600–1700 nm upon Al–Zn co-doping. The estimated direct optical band gap of the un-doped, doped, and co-doped CdO thin films is varied between 2.41 and 2.50 eV. All the samples exhibited n-type conductivity with low electrical resistivity of about 1.32 × 10–4 Ω⋅cm. Co-doped CdO thin films with 1% Al and 3% Zn exhibited higher carrier concentration (4.39 × 10+20 cm−3) than the other samples.Lire moins >
Lire la suite >Un-doped, Zn-doped, and Al–Zn co-doped CdO thin films were deposited onto glass substrates at 350 °C by spray pyrolysis. X-ray diffraction (XRD) analysis was conducted to investigate the structural properties of the films. The XRD patterns confirmed that all the films crystallize in a cubic structure and that the addition of Zn and Al did not alter the CdO crystal structure. Energy-dispersive X-ray spectroscopy analysis further confirmed the successful incorporation of Zn and Al into the CdO films. Theoretical calculations based on first-principles were performed, and crystallographic information files (CIF) were obtained for optimized theoretical supercells in space group Pm3-m. The CIF files were used as input for experimental XRD spectra Rietveld refinement, to determine the Wyckoff positions of the dopants and their occupation rates. The optical properties of the films were characterized using transmittance measurements in the wavelength range of 300–1700 nm. The optical data indicated an increase in the average transmittance from 60 to 70% within the wavelength range of 600–1700 nm upon Al–Zn co-doping. The estimated direct optical band gap of the un-doped, doped, and co-doped CdO thin films is varied between 2.41 and 2.50 eV. All the samples exhibited n-type conductivity with low electrical resistivity of about 1.32 × 10–4 Ω⋅cm. Co-doped CdO thin films with 1% Al and 3% Zn exhibited higher carrier concentration (4.39 × 10+20 cm−3) than the other samples.Lire moins >
Langue :
Anglais
Audience :
Internationale
Vulgarisation :
Non
Établissement(s) :
Université de Lille
CNRS
Centrale Lille
ENSCL
Univ. Artois
CNRS
Centrale Lille
ENSCL
Univ. Artois
Collections :
Équipe(s) de recherche :
Matériaux inorganiques, structures, systèmes et propriétés (MISSP)
Couches minces & nanomatériaux (CMNM)
Couches minces & nanomatériaux (CMNM)
Date de dépôt :
2023-06-05T08:20:51Z
2023-06-27T06:36:51Z
2023-06-27T06:36:51Z