Recherche
Résultats 21-25 de 25
-
Scalable Modeling of Transient Self-Heating of GaN High-Electron-Mobility Transistors Based on Experimental Measurements
IEEE Transactions on Electron Devices, Institute of Electrical and Electronics Engineers, 05-2019, 66; 5, 2139-2145Compte-rendu et recension critique d'ouvrage -
Fabrication, characterization, and physical analysis of AlGaN/GaN HEMTs on flexible substrates
IEEE Transactions on Electron Devices, Institute of Electrical and Electronics Engineers, 2013, 60, 1054-1059Compte-rendu et recension critique d'ouvrage -
Optimization of Al0.29Ga0.71N/GaN high electron mobility heterostructures for high-power/frequency performances
IEEE Transactions on Electron Devices, Institute of Electrical and Electronics Engineers, 2013, 60, 3105-3111Compte-rendu et recension critique d'ouvrage -
Revisited RF compact model of gate resistance suitable for high-K/metal gate technology
IEEE Transactions on Electron Devices, Institute of Electrical and Electronics Engineers, 2013, 60, 13-19Compte-rendu et recension critique d'ouvrage -
Modeling of Fermi-level pinning alleviation with MIS contacts: n and pMOSFETs cointegration considerations-Part II
IEEE Transactions on Electron Devices, Institute of Electrical and Electronics Engineers, 2016, 63; 9, 3419-3423Compte-rendu et recension critique d'ouvrage