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Résultats 1-10 de 21
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Fabrication and characterization of 200-nm self-aligned In0.53Ga0.47As MOSFET
22nd IEEE Conference on Indium Phosphide and Related Materials, IPRM'10, Takamatsu, 31-05-2010, Proceedings of the 22nd IEEE Conference on Indium Phosphide and Related Materials, IPRM'10, _, 2010Communication dans un congrès avec actes -
Potentiality of commercial metamorphic HEMT at cryogenic temperature and low voltage operation
5th European Microwave Integrated Circuits Conference, EuMIC 2010, Paris, 27-09-2010, Proceedings of the 5th European Microwave Integrated Circuits Conference, EuMIC 2010, _, 2010Communication dans un congrès avec actes -
100mV noise performances of Te-doped Sb-HEMT
8th International Conference on Advanced Semiconductor Devices and Microsystems, ASDAM 2010, 2010, Proceedings of the 8th International Conference on Advanced Semiconductor Devices and Microsystems, ASDAM 2010, _, 2010Communication dans un congrès avec actes -
Anisotropic transport properties in InAs/AlSb heterostructures
Applied Physics Letters, American Institute of Physics, 2010, 97, 243510-1-3Compte-rendu et recension critique d'ouvragetexte intégral -
GaSb/GaP compliant interface for high electron mobility AlSb/InAs heterostructures on (001) GaP
Applied Physics Letters, American Institute of Physics, 2010, 97, 192111-1-3Compte-rendu et recension critique d'ouvragetexte intégral -
Picosecond carrier lifetime in low-temperature-grown GaAsSb
Japanese Journal of Applied Physics, part 2 : Letters, Japan Society of Applied Physics, 2010, 3, 111202-1-3Compte-rendu et recension critique d'ouvrage -
Fully relaxed low-mismatched InAlAs layer on an InP substrate by using a two step buffer
Journal of Applied Physics, 2010, 107, 16102Article dans une revue scientifique -
Tellurium delta-doped 120nm AlSb/InAs HEMTs : towards sub-100mV electronics
68th Device Research Conference, DRC 2010, 2010, Proceedings of the 68th Device Research Conference, DRC 2010, _, 2010Communication dans un congrès avec actes -
Improvement of ohmic contacts to In0.65Ga0.35Sb using Mo refractory metal and surface preparation for 6.3 Å heterojunction bipolar transistors
Journal of Vacuum Science and Technology, American Vacuum Society (AVS), 2010, 28, 17-20Compte-rendu et recension critique d'ouvrage -
Graphene growth by molecular beam epitaxy on the carbon-face of SiC
Applied Physics Letters, American Institute of Physics, 2010, 97; 24, 241907Compte-rendu et recension critique d'ouvragetexte intégral