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Fully relaxed low-mismatched InAlAs layer on an InP substrate by using a two step buffer
Journal of Applied Physics, 2010, 107, 16102Article dans une revue scientifique -
Picosecond Carrier Lifetime in Low-Temperature-Grown GaAsSb
Applied Physics Express, 2010, 3, 111202Article dans une revue scientifique -
Sb-HEMT : toward 100-mV cryogenics electronics
IEEE Transactions on Electron Devices, Institute of Electrical and Electronics Engineers, 2010, 57, 1903-1909Compte-rendu et recension critique d'ouvrage -
Microwave performance of InAlAsSb/In0.35Ga0.65Sb/InAlAsSb double heterojunction bipolar transistors
IEEE Electron Device Letters, Institute of Electrical and Electronics Engineers, 2010, 31, 299-301Compte-rendu et recension critique d'ouvrage -
Gold-free growth of GaAs nanowires on silicon : arrays and polytypism
Nanotechnology, Institute of Physics, 2010, 21, 385602-1-8Compte-rendu et recension critique d'ouvragetexte intégral -
Improvement of ohmic contacts to In0.65Ga0.35Sb using Mo refractory metal and surface preparation for 6.3 Å heterojunction bipolar transistors
Journal of Vacuum Science and Technology, American Vacuum Society (AVS), 2010, 28, 17-20Compte-rendu et recension critique d'ouvrage -
Tellurium delta-doped 120nm AlSb/InAs HEMTs : towards sub-100mV electronics
68th Device Research Conference, DRC 2010, 2010, Proceedings of the 68th Device Research Conference, DRC 2010, _, 2010Communication dans un congrès avec actes -
High frequency performance of tellurium δ-doped AlSb/InAs HEMTs at low power supply
5th European Microwave Integrated Circuits Conference, EuMIC 2010, 2010, Proceedings of the 5th European Microwave Integrated Circuits Conference, EuMIC 2010, _, 2010Communication dans un congrès avec actes -
Graphene growth by molecular beam epitaxy using a solid carbon source
physica status solidi (a), Wiley, 2010, 207, 300-303Compte-rendu et recension critique d'ouvragetexte intégral -
Fully relaxed low-mismatched InAlAs layer on an InP substrate by using a two step buffer
Journal of Applied Physics, American Institute of Physics, 2010, 107; 1, 0161021Compte-rendu et recension critique d'ouvragetexte intégral