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Measurement of Self-Heating Temperature in AlGaN/GaN HEMTs by Using Cerium Oxide Micro-Raman Thermometers
IEEE Transactions on Electron Devices, Institute of Electrical and Electronics Engineers, 10-2019, 66; 10, 4156-4163Compte-rendu et recension critique d'ouvrage -
Fully atomistic simulations of phonon-limited mobility of electrons and holes in <001>-, <110>-, and <111>-oriented Si nanowires
IEEE Transactions on Electron Devices, Institute of Electrical and Electronics Engineers, 2012, 59, 1480-1487Compte-rendu et recension critique d'ouvrage -
High-performance GaNAsSb/GaAs 1.55-µm waveguide photodetector
IEEE Transactions on Electron Devices, Institute of Electrical and Electronics Engineers, 2011, 58, 758-763Compte-rendu et recension critique d'ouvrage -
Low-frequency noise in Schottky-barrier-based nanoscale field-effect transistors
IEEE Transactions on Electron Devices, Institute of Electrical and Electronics Engineers, 2012, 59, 180-187Compte-rendu et recension critique d'ouvrage -
Characterization and Modeling of Graphene Transistor Low-Frequency Noise
IEEE Transactions on Electron Devices, Institute of Electrical and Electronics Engineers, 01-02-2012, 59; 2, 516-519Compte-rendu et recension critique d'ouvrage -
Thermal noise in MOSFETs : a two- or a three-parameter noise model ?
IEEE Transactions on Electron Devices, Institute of Electrical and Electronics Engineers, 2010, 57, 1188-1191Compte-rendu et recension critique d'ouvrage -
Theoretical investigation of terahertz GaN mesa transferred-electron device by means of time-domain energy/momentum modeling
IEEE Transactions on Electron Devices, Institute of Electrical and Electronics Engineers, 2012, 59, 3321-3326Compte-rendu et recension critique d'ouvrage -
Modeling of Fermi-level pinning alleviation with MIS contacts: n and pMOSFETs cointegration considerations-Part II
IEEE Transactions on Electron Devices, Institute of Electrical and Electronics Engineers, 2016, 63; 9, 3419-3423Compte-rendu et recension critique d'ouvrage -
Trends in submicrometer InP-based HBT architecture targeting thermal management
IEEE Transactions on Electron Devices, Institute of Electrical and Electronics Engineers, 01-08-2011, 58; 8, art. no. 5776669, pp. 2566-2572.Compte-rendu et recension critique d'ouvrage -
Fabrication and characterization of an epitaxial graphene nanoribbon-based field-effect transistor
IEEE Transactions on Electron Devices, Institute of Electrical and Electronics Engineers, 2011, 58, 1594-1596Compte-rendu et recension critique d'ouvrage