Browsing by Author "Frayssinet, Eric"
Now showing items 1-13 of 13
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2 W / mm power density of an AlGaN/GaN HEMT grown on free-standing GaN substrate at 40 GHz
Irekti, Mohamed-Reda; Lesecq, Marie; Defrance, Nicolas; et al.Semiconductor Science and Technology, IOP Publishing, 01-12-2019, 34; 12, 12LT01Compte-rendu et recension critique d'ouvragefulltext -
Activité électrique de l'interface AlN/Si: identification de l'origine principale des pertes de propagation en hyperfréquences dans les composants GaN sur Silicium
Bah, Micka; Valente, Damien; Lesecq, Marie; et al.Scientific Reports, Nature Publishing Group, 25-08-2020, 10; 1, 14166Compte-rendu et recension critique d'ouvragefulltext -
AlGaN/GaN High Electron Mobility Transistors Grown by MOVPE on 3C-SiC/Si(111) for RF Applications
Lesecq, Marie; Frayssinet, Eric; Portail, Marc; et al.Materials Science Forum, Trans Tech Publications Inc., 31-05-2022, 1062, 482-486Compte-rendu et recension critique d'ouvragefulltext -
Combination of selective area sublimation of p-GaN and regrowth of AlGaN for the co-integration of enhancement mode and depletion mode high electron mobility transistors
Ngo, Thi Huong; Comyn, Rémi; Chenot, Sébastien; et al.Solid-State Electronics, Elsevier, 2022, 188, 108210Compte-rendu et recension critique d'ouvragefulltext -
Development of AlGaN/GaN RF HEMT technology on free-standing GaN substrate
Irekti, M.R.; Lesecq, Marie; Defrance, Nicolas; et al.43rd Workshop on Compound Semiconductor Devices and Integrated Circuits, WOCSDICE 2019, Cabourg, 17-06-2019Autre communication scientifique (congrès sans actes - poster - séminaire...) -
Fluorine-based plasma treatment for AlGaN/GaN e-mode HEMTs and low on-voltage diodes
Fornasiero, Quentin; Defrance, Nicolas; Lesecq, Marie; et al.Wocsdice Exmatec 2021, Bristol (virtual), 14-06-2021, Proceedings of Wocsdice Exmatec 2021, 14-06-2021Communication dans un congrès avec actesfulltext -
Influence of AlN Growth Temperature on the Electrical Properties of Buffer Layers for GaN HEMTs on Silicon
Cordier, Yvon; Comyn, Remi; Frayssinet, Eric; et al.physica status solidi (a), Wiley, 2018, 215; 9, -Compte-rendu et recension critique d'ouvragefulltext -
Investigation of electrical activity at the AlN/Si interface using scanning capacitance microscopy and scanning spreading resistance microscopy
Bah, Micka; Valente, Damien; Lesecq, Marie; et al.Wocsdice Exmatec 2021, Bristol (virtual), 14-06-2021, Proceedings of Wocsdice Exmatec 2021, 14-06-2021Communication dans un congrès avec actesfulltext -
Metalorganic chemical vapor phase epitaxy growth of buffer layers on 3C-SiC/Si(111) templates for AlGaN/GaN high electron mobility transistors with low RF losses
Frayssinet, Eric; Nguyen, Luan; Lesecq, Marie; et al.physica status solidi (a), Wiley, 04-2020, 217; 7, 1900760Compte-rendu et recension critique d'ouvragefulltext -
New barrier layer design for the fabrication of gallium nitride-metal-insulator-semiconductor-high electron mobility transistor normally-off transistor
Cozette, Flavien; Hassan, Bilal; Rodriguez, Christophe; et al.Semiconductor Science and Technology, IOP Publishing, 2021, 36; 3, 034002Compte-rendu et recension critique d'ouvragefulltext -
Performance improvement with non-alloyed ohmic contacts technology on AlGaN/GaN High Electron Mobility Transistors on 6H-SiC substrate
Lesecq, Marie; Fouzi, Yassine; Abboud, Ali; et al.MICROELECTRONIC ENGINEERING, Elsevier, 05-2023, 276, 111998Compte-rendu et recension critique d'ouvragefulltext -
Selective GaN sublimation and local area regrowth for co-integration of enhancement mode and depletion mode Al(Ga)N/GaN high electron mobility transistors
Ngo, Thi Huong; Comyn, Rémi; Chenot, Sébastien; et al.Semiconductor Science and Technology, IOP Publishing, 02-2021, 36; 2, 024001Compte-rendu et recension critique d'ouvragefulltext -
Selective sublimation of GaN and regrowth of AlGaN to co-integrate enhancement mode and depletion mode high electron mobility transistors
Ngo, Thi Huong; Comyn, Rémi; Chenot, Sébastien; et al.Journal of Crystal Growth, Elsevier, 01-09-2022, 593, 126779Compte-rendu et recension critique d'ouvragefulltext