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First power performance demonstration of flexible AlGaN/GaN high electron mobility transistor
IEEE Electron Device Letters, Institute of Electrical and Electronics Engineers, 05-2016, 37; 5, 553-555Compte-rendu et recension critique d'ouvrage -
An advanced ageing methodology for robustness assessment of normally-off AlGaN/GaN HEMT
15th European Microwave Integrated Circuits Conference, EuMIC 2020, Utrecht, 11-01-2021, Institute of Electrical and Electronics Engineers Inc., 2021Communication dans un congrès avec actes -
[Invited] High efficiency high robustness mmW AlN/GaN transistors
International Microwave Symposium (IMS 2023), San Diego (CA), 11-06-2023 -
[Invited] Pushing the breakdown voltage and temperature capabilities of GaN HEMTs by using UWBG Al-rich channel
European Materials Research Society Fall 2023 (EMRS-2023), Warsaw, 18-09-2023 -
[Invited] Highly efficiency and reliable mm-wave AlN/GaN transistors
XXII International Workshop on Physics of Semiconductor Devices, Madras, 13-12-2023 -
MOVPE growth of buffer layers on 3C-SiC/Si(111) templates for AlGaN/GaN high electron mobility transistors with low RF losses
43rd Workshop on Compound Semiconductor Devices and Integrated Circuits, WOCSDICE 2019, Cabourg, 17-06-2019 -
Anisotropic mobility in AlGaN/GaN heterostructure with thin GaN on AlN/Sapphire template
WOCSDICE EXMATEC 2022, Ponta Delgada, 03-05-2022Communication dans un congrès avec actes