Recherche
Résultats 11-20 de 504
-
Measurement of Self-Heating Temperature in AlGaN/GaN HEMTs by Using Cerium Oxide Micro-Raman Thermometers
IEEE Transactions on Electron Devices, Institute of Electrical and Electronics Engineers, 10-2019, 66; 10, 4156-4163Compte-rendu et recension critique d'ouvrage -
Room Temperature Direct and Heterodyne Detection of 0.28–0.69-THz Waves Based on GaN 2-DEG Unipolar Nanochannels
IEEE Transactions on Electron Devices, Institute of Electrical and Electronics Engineers, 01-2016, 63; 1, 353 - 359Compte-rendu et recension critique d'ouvragetexte intégral -
Annihilation of electrical trap effects by irradiating AlGaN/GaN HEMTs with low thermal neutrons radiation fluence
Microelectronics Reliability, Elsevier, 09-2012, 52; 9-10, 2159 - 2163Compte-rendu et recension critique d'ouvragetexte intégral -
Current-voltage characteristics of (Mo/Au)/AlGaN/GaN/Si Schottky diodes
European Materials Research Society Spring Meeting, E-MRS Spring 2014, Symposium X - Materials research for group IV semiconductors : growth, characterization and technological developments, Lille, 2014 -
Effect of passivation on microwave power performances of AlGaN/GaN/Si HEMTs
Sensors & Transducers., IFSA Publishing, S.L., 2014, 27, 277-279Compte-rendu et recension critique d'ouvrage -
Device and method for mixing electromagnetic waves with frequencies up to the THz range
EP2731263 (A1), 14-05-2014Brevet -
Noise parameters of SiGe HBTs in mmW range: towards a full in situ measurement extraction
2017 International Conference on Noise and Fluctuations (ICNF), Vilnius, 20-06-2017, IEEE -
[Invited] Millimeter-wave noise and power characterization using in situ tuner
62nd IEEE MTT-S International Microwave Symposium, IMS 2014, Workshop WMI - Challenges and advances in wafer-level calibration and characterization of millimeter and sub-millimeter wave devices and systems, Tampa, FL, 2014 -
On the correlation between kink effect and effective mobility in InAlN/GaN HEMTs
9th European Microwave Integrated Circuit Conference (EuMIC), Rome, 06-10-2014, 9th European Microwave Integrated Circuit Conference (EuMIC), IEEE, 2014Communication dans un congrès avec actes -
Variation des paramètres d'un transistor bipolaire Si/SiGe:C BiCMOS9MW, en fonction de la contrainte apportée par la densité des connexions métalliques
17èmes Journées Nationales du Réseau Doctoral en Micro-Nanoélectronique, JNRDM 2014, Villeneuve d'Ascq, 2014, Actes des 17èmes Journées Nationales du Réseau Doctoral en Micro-Nanoélectronique, JNRDM 2014, 2014Communication dans un congrès avec actes