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Now showing items 1-7 of 7
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Numerical and experimental analysis of the static characteristics and noise in ungated recessed MESFET structures
Solid-State Electronics, Elsevier, 11-1996, 39; 11, 1629-1636Compte-rendu et recension critique d'ouvragefulltext -
Noise analysis of 0.1 mm gate MESFETs and HEMTs
Solid-State Electronics, Elsevier, 01-1998, 42; 1, 79-85Compte-rendu et recension critique d'ouvragefulltext -
HIGH-FREQUENCY NOISE AND DIFFUSION-COEFFICIENT OF HOT-ELECTRONS IN BULK AL0.25GA0.75AS
Solid-State Electronics, Elsevier, 08-1994, 37; 8, 1477-1483Compte-rendu et recension critique d'ouvragefulltext -
Influence of the gate leakage current on the noise performance of MESFETs and MODFETs
Solid-State Electronics, Elsevier, 05-1995, 38; 5, 1081-1087Compte-rendu et recension critique d'ouvragefulltext -
Noise analysis in devices under nonlinear operation
Solid-State Electronics, Elsevier, 01-1999, 43; 1, 21-26Compte-rendu et recension critique d'ouvragefulltext -
Nanometer scale lithography on silicon, titanium and PMMA resist using scanning probe microscopy
Solid-State Electronics, Elsevier, 06-1999, 43; 6, 1085-1089Compte-rendu et recension critique d'ouvragefulltext -
Analysis of the hot-carrier degradation of deep-submicrometer large-angle-tilt-implanted drain (LATID) MOSFETs
Solid-State Electronics, Elsevier, 09-1997, 41; 9, 1293-1301Compte-rendu et recension critique d'ouvragefulltext