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[Invited] Prospects of ultrawide bandgap materials and devices[Invited]
International Union of Materials Research Societies - International Conference in Asia 2021, IUMRS-ICA 2021, Session IX - Semiconductor Materials and Devices, Jeju Island, 03-10-2021, 2021 -
Towards high buffer breakdown field and high temperature stability AlGaN channel HEMTs on silicon substrate
Compound Semiconductor Week, CSW 2022, Ann Arbor, MI, 01-06-2022, Towards high buffer breakdown field and high temperature stabilityAlGaN channel HEMTs on silicon substrate 2022Communication dans un congrès avec actestexte intégral -
Towards highly efficient high power X‐band AlN/GaN MIS HEMTs operating above 50V
European Conference on Renewable Energy Systems (ECRES 2022), Istanbul, 07-05-2022, 2022Autre communication scientifique (congrès sans actes - poster - séminaire...)Communication dans un congrès avec actestexte intégral -
Stability of the threshold voltage in fluorine-implanted normally-off AlN/GaN HEMTs co-integrated with commercial normally-on GaN HEMT technology
Microelectronics Reliability, Elsevier, 2021, 126, 114291Compte-rendu et recension critique d'ouvragetexte intégral -
Physical Insights of thin AlGaN Back Barrier for millimeter-wave high voltage AlN/GaN on SiC HEMTs
Applied Physics Letters, American Institute of Physics, 2023, 123; 4, 142102Compte-rendu et recension critique d'ouvragetexte intégral -
[Webinar] Towards high performance mm-wave GaN power transistors
pCoE - GaN Research and Development (GRAND) Webinar Series, Online, 21-04-2022 -
Sub-Micron Thick GaN-on-Si HEMTs with More than 7.5 MV/cm Buffer Breakdown Field
WOCSDICE EXMATEC 2022, Ponta Delgada, 03-05-2022Communication dans un congrès avec actes -
High Breakdown Field and Low Trapping Effects up to 1400 V in Normally Off GaN‐on‐Silicon Heterostructures
European Conference on Renewable Energy Systems (ECRES 2022), Istanbul, 07-05-2022, 2022Autre communication scientifique (congrès sans actes - poster - séminaire...)Communication dans un congrès avec actestexte intégral -
Selective GaN sublimation and local area regrowth for co-integration of enhancement mode and depletion mode Al(Ga)N/GaN high electron mobility transistors
Semiconductor Science and Technology, IOP Publishing, 02-2021, 36; 2, 024001Compte-rendu et recension critique d'ouvragetexte intégral -
A cost-effective technology to improve power performance of nanoribbons GaN HEMTs
Applied Physics Letters, American Institute of Physics, 24-01-2022, 120; 4, 042102Compte-rendu et recension critique d'ouvragetexte intégral