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Investigation on GaN channel thickness downscaling in high electron mobility transistor structures grown on AlN bulk substrate
WOCSDICE EXMATEC 2022, Ponta Delgada, 03-05-2022Communication dans un congrès avec actes -
Anisotropic mobility in AlGaN/GaN heterostructure with thin GaN on AlN/Sapphire template
WOCSDICE EXMATEC 2022, Ponta Delgada, 03-05-2022Communication dans un congrès avec actes -
[Workshop] Electronics
Ganex winter school on the physics and applications of nitrides, Autrans, 07-03-2022 -
Low Buffer Trapping Effects above 1200 V in Normally off GaN-on-Silicon Field Effect Transistors
Micromachines; III–V Compound Semiconductors and Devices, MDPI, 2022, 13; 9, 1519Compte-rendu et recension critique d'ouvragetexte intégral -
Selective sublimation of GaN and regrowth of AlGaN to co-integrate enhancement mode and depletion mode high electron mobility transistors
Journal of Crystal Growth, Elsevier, 01-09-2022, 593, 126779Compte-rendu et recension critique d'ouvragetexte intégral -
Comprehensive model for ideal reverse leakage current components in Schottky barrier diodes tested in GaN-on-SiC samples
Journal of Applied Physics, American Institute of Physics, 28-07-2022, 132; 4, 044502Compte-rendu et recension critique d'ouvragetexte intégral -
On the correlation between kink effect and effective mobility in InAlN/GaN HEMTs
9th European Microwave Integrated Circuit Conference (EuMIC), Rome, 06-10-2014, 9th European Microwave Integrated Circuit Conference (EuMIC), IEEE, 2014Communication dans un congrès avec actes -
[Invited] High efficiency high robustness Q-band AlN/GaN transistors
International Conference on Materials for Advanced Technologies (ICMAT) 2023, Singapore, 26-06-2023 -
Pushing Q-band power performances by means of buffer engineering in AlN-GaN HEMTs
46th Workshop on Compound Semiconductor Devices and Integrated Circuits (WOCSDICE 2023), Palerme (Italie), 21-05-2023, Proceeding of WOCSDICE 2023Communication dans un congrès avec actestexte intégral -
Epi-design optimization in AlN/GaN HEMTs for superior drain bias operation and reduced trapping effects
14th International Conference on Nitride Semiconductors (ICNS-14), Nagoya, 12-11-2023Communication dans un congrès avec actestexte intégral