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Résultats 1-10 de 70
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On the correlation between kink effect and effective mobility in InAlN/GaN HEMTs
9th European Microwave Integrated Circuit Conference (EuMIC), Rome, 06-10-2014, 9th European Microwave Integrated Circuit Conference (EuMIC), IEEE, 2014Communication dans un congrès avec actes -
Activité électrique de l'interface AlN/Si: identification de l'origine principale des pertes de propagation en hyperfréquences dans les composants GaN sur Silicium
Scientific Reports, Nature Publishing Group, 25-08-2020, 10; 1, 14166Compte-rendu et recension critique d'ouvragetexte intégral -
Recent improvements of flexible GaN-based HEMT technology
physica status solidi (a), Wiley, 04-2017, 214; 4, 1600484, 5 pagesCompte-rendu et recension critique d'ouvrage -
Cl<sub>2</sub>/Ar based atomic layer etching of AlGaN layers
Journal of Vacuum Science & Technology A, American Vacuum Society, 07-2019, 37; 4, 041001Compte-rendu et recension critique d'ouvrage -
Power performance at 40 GHz of AlGaN/GaN high electron mobility transistors grown by molecular beam epitaxy on Si(111) substrate
IEEE Electron Device Letters, Institute of Electrical and Electronics Engineers, 04-2015, 36; 4, 303-305Compte-rendu et recension critique d'ouvrage -
Large-signal modeling up to W-band of AlGaN/GaN based high-electron-mobility transistors
10th European Microwave Integrated Circuits Conference (EuMIC), Paris, 07-09-2015, 10th European Microwave Integrated Circuits Conference (EuMIC 2015), IEEE, 2015Communication dans un congrès avec actes -
Pendeo-epitaxy of GaN on SOI nano-pillars: Freestanding and relaxed GaN platelets on silicon with a reduced dislocation density
Journal of Crystal Growth, Elsevier, 11-2019, 526, 125235Compte-rendu et recension critique d'ouvragetexte intégral -
Piezoelectric MEMS resonators based on ultrathin epitaxial GaN heterostructures on Si
Journal of Micromechanics and Microengineering, IOP Publishing, 2016, 26; 10, 105015Compte-rendu et recension critique d'ouvragetexte intégral -
Characterization and modeling of traps and RF frequency dispersion in AlGaN/AlN/GaN HEMTs
11th European Microwave Integrated Circuits Conference (EuMIC), London, 03-10-2016, Proceedings of 11th European Microwave Integrated Circuits Conference, EuMIC 2016, 11th European Microwave Integrated Circuits Conference (EuMIC), IEEE, 2016Communication dans un congrès avec actes -
Influence of AlN Growth Temperature on the Electrical Properties of Buffer Layers for GaN HEMTs on Silicon
physica status solidi (a), Wiley, 2018, 215; 9, -Compte-rendu et recension critique d'ouvragetexte intégral