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On the correlation between kink effect and effective mobility in InAlN/GaN HEMTs
9th European Microwave Integrated Circuit Conference (EuMIC), Rome, 06-10-2014, 9th European Microwave Integrated Circuit Conference (EuMIC), IEEE, 2014Communication dans un congrès avec actes -
Cl<sub>2</sub>/Ar based atomic layer etching of AlGaN layers
Journal of Vacuum Science & Technology A, American Vacuum Society, 07-2019, 37; 4, 041001Compte-rendu et recension critique d'ouvrage -
[Webinar] Towards high performance mm-wave GaN power transistors
pCoE - GaN Research and Development (GRAND) Webinar Series, Online, 21-04-2022 -
Sub-Micron Thick GaN-on-Si HEMTs with More than 7.5 MV/cm Buffer Breakdown Field
WOCSDICE EXMATEC 2022, Ponta Delgada, 03-05-2022Communication dans un congrès avec actes -
[Invited] High efficiency high robustness Q-band AlN/GaN transistors
International Conference on Materials for Advanced Technologies (ICMAT) 2023, Singapore, 26-06-2023 -
[Invited] High efficiency high robustness mmW AlN/GaN transistors
International Microwave Symposium (IMS 2023), San Diego (CA), 11-06-2023 -
Role of AlGaN back-barrier in enhancing the robustness of ultra-thin AlN/GaN HEMT for mmWave applications
Microelectronics Reliability, Elsevier, 11-2023, 150, 115110Compte-rendu et recension critique d'ouvrage -
[Invited] Highly efficiency and reliable mm-wave AlN/GaN transistors
XXII International Workshop on Physics of Semiconductor Devices, Madras, 13-12-2023 -
[Invited] Pushing the breakdown voltage and temperature capabilities of GaN HEMTs by using UWBG Al-rich channel
European Materials Research Society Fall 2023 (EMRS-2023), Warsaw, 18-09-2023 -
[Invited] Prospects of ultrawide bandgap materials and devices[Invited]
International Union of Materials Research Societies - International Conference in Asia 2021, IUMRS-ICA 2021, Session IX - Semiconductor Materials and Devices, Jeju Island, 03-10-2021, 2021