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[Invited] High efficiency high robustness Q-band AlN/GaN transistors
International Conference on Materials for Advanced Technologies (ICMAT) 2023, Singapore, 26-06-2023 -
[Invited] AlGaN Channel HEMTs for High Voltage Applications
MRS Spring Meeting & Exhibit, Honolulu (Online), 23-05-2022 -
Technological development towards high performance millimeter-wave GaN HEMTs and enhanced reliability
16th European Microwave Integrated Circuits Conference, EuMIC 2021, London, 03-04-2022 -
[Invited] High power-added-efficiency millimeter-wave GaN HEMTs[Invited]
GaN marathon 2022, Venice, 20-06-2022, 2022 -
Role of AlGaN back-barrier in enhancing the robustness of ultra-thin AlN/GaN HEMT for mmWave applications
Microelectronics Reliability, Elsevier, 11-2023, 150, 115110Compte-rendu et recension critique d'ouvrage -
Dual role of 3C-SiC interlayer on DC and RF isolation of GaN/Si-based devices
Applied Physics Letters, American Institute of Physics, 19-09-2022, 121; 12, 122103Compte-rendu et recension critique d'ouvrage -
Power performance at 40 GHz of AlGaN/GaN high electron mobility transistors grown by molecular beam epitaxy on Si(111) substrate
IEEE Electron Device Letters, Institute of Electrical and Electronics Engineers, 04-2015, 36; 4, 303-305Compte-rendu et recension critique d'ouvrage -
Large-signal modeling up to W-band of AlGaN/GaN based high-electron-mobility transistors
10th European Microwave Integrated Circuits Conference (EuMIC), Paris, 07-09-2015, 10th European Microwave Integrated Circuits Conference (EuMIC 2015), IEEE, 2015Communication dans un congrès avec actes -
Recent improvements of flexible GaN-based HEMT technology
physica status solidi (a), Wiley, 04-2017, 214; 4, 1600484, 5 pagesCompte-rendu et recension critique d'ouvrage -
Cl<sub>2</sub>/Ar based atomic layer etching of AlGaN layers
Journal of Vacuum Science & Technology A, American Vacuum Society, 07-2019, 37; 4, 041001Compte-rendu et recension critique d'ouvrage