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Large-signal modeling up to W-band of AlGaN/GaN based high-electron-mobility transistors
10th European Microwave Integrated Circuits Conference (EuMIC), Paris, 07-09-2015, 10th European Microwave Integrated Circuits Conference (EuMIC 2015), IEEE, 2015Communication dans un congrès avec actes -
Cl<sub>2</sub>/Ar based atomic layer etching of AlGaN layers
Journal of Vacuum Science & Technology A, American Vacuum Society, 07-2019, 37; 4, 041001Compte-rendu et recension critique d'ouvrage -
Impact of the bending on the electroluminescence of flexible InGaN/GaN light-emitting diodes
IEEE Photonics Technology Letters, Institute of Electrical and Electronics Engineers, 01-08-2016, 28; 15, 1661-1664Compte-rendu et recension critique d'ouvrage -
First power performance demonstration of flexible AlGaN/GaN high electron mobility transistor
IEEE Electron Device Letters, Institute of Electrical and Electronics Engineers, 05-2016, 37; 5, 553-555Compte-rendu et recension critique d'ouvrage -
On the correlation between kink effect and effective mobility in InAlN/GaN HEMTs
9th European Microwave Integrated Circuit Conference (EuMIC), Rome, 06-10-2014, 9th European Microwave Integrated Circuit Conference (EuMIC), IEEE, 2014Communication dans un congrès avec actes -
Optical and Thermal Performances of (Ga,In)N/GaN Light Emitting Diodes Transferred on a Flexible Tape
IEEE Photonics Technology Letters, Institute of Electrical and Electronics Engineers, 2018, 30; 17, 1567-1570Compte-rendu et recension critique d'ouvragetexte intégral -
2 W / mm power density of an AlGaN/GaN HEMT grown on free-standing GaN substrate at 40 GHz
Semiconductor Science and Technology, IOP Publishing, 01-12-2019, 34; 12, 12LT01Compte-rendu et recension critique d'ouvragetexte intégral -
Investigation of electrical activity at the AlN/Si interface using scanning capacitance microscopy and scanning spreading resistance microscopy
Wocsdice Exmatec 2021, Bristol (virtual), 14-06-2021, Proceedings of Wocsdice Exmatec 2021, 14-06-2021Communication dans un congrès avec actestexte intégral -
Power performance at 40 GHz of AlGaN/GaN high electron mobility transistors grown by molecular beam epitaxy on Si(111) substrate
IEEE Electron Device Letters, Institute of Electrical and Electronics Engineers, 04-2015, 36; 4, 303-305Compte-rendu et recension critique d'ouvrage -
Recent improvements of flexible GaN-based HEMT technology
physica status solidi (a), Wiley, 04-2017, 214; 4, 1600484, 5 pagesCompte-rendu et recension critique d'ouvrage