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Résultats 1-10 de 10
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On the correlation between kink effect and effective mobility in InAlN/GaN HEMTs
9th European Microwave Integrated Circuit Conference (EuMIC), Rome, 06-10-2014, 9th European Microwave Integrated Circuit Conference (EuMIC), IEEE, 2014Communication dans un congrès avec actes -
Recent improvements of flexible GaN-based HEMT technology
physica status solidi (a), Wiley, 04-2017, 214; 4, 1600484, 5 pagesCompte-rendu et recension critique d'ouvrage -
Cl<sub>2</sub>/Ar based atomic layer etching of AlGaN layers
Journal of Vacuum Science & Technology A, American Vacuum Society, 07-2019, 37; 4, 041001Compte-rendu et recension critique d'ouvrage -
Power performance at 40 GHz of AlGaN/GaN high electron mobility transistors grown by molecular beam epitaxy on Si(111) substrate
IEEE Electron Device Letters, Institute of Electrical and Electronics Engineers, 04-2015, 36; 4, 303-305Compte-rendu et recension critique d'ouvrage -
Large-signal modeling up to W-band of AlGaN/GaN based high-electron-mobility transistors
10th European Microwave Integrated Circuits Conference (EuMIC), Paris, 07-09-2015, 10th European Microwave Integrated Circuits Conference (EuMIC 2015), IEEE, 2015Communication dans un congrès avec actes -
Impact of the bending on the electroluminescence of flexible InGaN/GaN light-emitting diodes
IEEE Photonics Technology Letters, Institute of Electrical and Electronics Engineers, 01-08-2016, 28; 15, 1661-1664Compte-rendu et recension critique d'ouvrage -
First power performance demonstration of flexible AlGaN/GaN high electron mobility transistor
IEEE Electron Device Letters, Institute of Electrical and Electronics Engineers, 05-2016, 37; 5, 553-555Compte-rendu et recension critique d'ouvrage -
An advanced ageing methodology for robustness assessment of normally-off AlGaN/GaN HEMT
15th European Microwave Integrated Circuits Conference, EuMIC 2020, Utrecht, 11-01-2021, Institute of Electrical and Electronics Engineers Inc., 2021Communication dans un congrès avec actes -
Characterization and modeling of traps and RF frequency dispersion in AlGaN/AlN/GaN HEMTs
11th European Microwave Integrated Circuits Conference (EuMIC), London, 03-10-2016, Proceedings of 11th European Microwave Integrated Circuits Conference, EuMIC 2016, 11th European Microwave Integrated Circuits Conference (EuMIC), IEEE, 2016Communication dans un congrès avec actes -
MOVPE growth of buffer layers on 3C-SiC/Si(111) templates for AlGaN/GaN high electron mobility transistors with low RF losses
43rd Workshop on Compound Semiconductor Devices and Integrated Circuits, WOCSDICE 2019, Cabourg, 17-06-2019