Browsing by Author "Kabouche, Riad"
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Above 70% PAE in Q-band with AlN/GaN HEMTs structures
Harrouche, Kathia; Kabouche, Riad; Okada, Etienne; et al.WOCSDICE2021, Bristol, 14-06-2021, WOCSDICE2021, 14-06-2021Communication dans un congrès avec actesfulltext -
AlGaN/GaN High Electron Mobility Transistors with Ultra -Wide Bandgap AlN buffer
Abid, Idriss; Kabouche, Riad; Zegaoui, Malek; et al.43rd Workshop on Compound Semiconductor Devices and Integrated Circuits, WOCSDICE 2019, Cabourg, 17-06-2019, 2019 WOCSDICE proceedingCommunication dans un congrès avec actesfulltext -
C-doped AlN/GaN HEMTs for High efficiency mmW applications
Pécheux, Romain; Kabouche, Riad; Okada, Etienne; et al.International Workshop on Integrated Nonlinear Microwave and Millimetre-wave Circuits (INMMIC 2018), Brive La Gaillarde, 05-07-2018, 2018 International Workshop on Integrated Nonlinear Microwave and Millimetre-wave Circuits (INMMIC), IEEECommunication dans un congrès avec actesfulltext -
Comparison of C-Doped AlN/GaN HEMTs and AlN/GaN/AlGaN Double Heterostructure for mmW Applications
Kabouche, Riad; Derluyn, Joff; Püsche, Roland; et al.13th European Microwave Integrated Circuits Conference (EuMIC 2018), Madrid, 23-09-2018, 2018 13th European Microwave Integrated Circuits Conference (EuMIC), IEEECommunication dans un congrès avec actesfulltext -
Demonstration of GaN-on-silicon material system operating up to 3 kilovolts with reduced trapping effects
Kabouche, Riad; Abid, Idriss; Zegaoui, Malek; et al.International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2019, Minneapolis, 29-04-2019, 2019 CS MANTECH proceedingCommunication dans un congrès avec actesfulltext -
Development of setup for on-wafer pulse-to-pulse stability characterization of GaN HEMT transistor in KU-band
Pécheux, Romain; Ducournau, Guillaume; Kabouche, Riad; et al.16èmes Journées Nano, Micro, et Optoélectronique, JNMO 2018, Agay, 13-06-2018, Actes des 16èmes Journées Nano, Micro, et Optoélectronique, JNMO 2018Communication dans un congrès avec actesfulltext -
First demonstration of RF GaN-based transistors using buffer-free heterostructures with low trapping effects
Pecheux, R; Kabouche, Riad; Zegaoui, Malek; et al.International Workshop on Nitride Semiconductors, IWN 2018, Kanazawa, 11-11-2018, IWN2018Communication dans un congrès avec actesfulltext -
GaN-based transistors using buffer-free heterostructures for next generation RF devices
Pécheux, Romain; Kabouche, Riad; Zegaoui, Malek; et al.9th Wide Band Gap Semiconductor and Components Workshop, Harwell, 08-10-2018Autre communication scientifique (congrès sans actes - poster - séminaire...)fulltext -
High breakdown voltage and low buffer trapping in superlattice GaN-on-silicon heterostructures for high voltage applications
Tajalli, Alaleh; Meneghini, Matteo; Besendörfer, Sven; et al.Materials, MDPI, 25-09-2020, 13; 19, 4271Compte-rendu et recension critique d'ouvragefulltext -
High Efficiency AlN/GaN HEMTs for Q-Band Applications with an Improved Thermal Dissipation
Kabouche, Riad; Pecheux, Romain; Harrouche, Kathia; et al.International Journal of High Speed Electronics and Systems, World Scientific Publishing, 03-2019, 28; 01n02, 1940003Compte-rendu et recension critique d'ouvragefulltext -
High Electron Confinement under High Electric Field in RF GaN-on-Silicon HEMTs
Medjdoub, Farid; Kabouche, Riad; Dogmus, Ezgi; et al.Electronics, MDPI, 2016, 5; 1, 12Compte-rendu et recension critique d'ouvragefulltext -
High electron mobility in high-polarization sub-10 nm barrier thickness InAlGaN/GaN heterostructure
Medjdoub, Farid; Kabouche, Riad; Linge, Astrid; et al.Applied Physics Express, IOPScience - Japan Society of Applied Physics, 01-10-2015, 8; 10, 101001Compte-rendu et recension critique d'ouvrage -
High Lateral Breakdown Voltage in Thin Channel AlGaN/GaN High Electron Mobility Transistors on AlN/Sapphire Templates
Abid, Idriss; Kabouche, Riad; Bougerol, Catherine; et al.Micromachines, MDPI, 10-2019, 10, 690Compte-rendu et recension critique d'ouvragefulltext -
High performance and highly robust AlN/GaN HEMTs for millimeter-wave operation
Harrouche, Kathia; Kabouche, Riad; Okada, Etienne; et al.IEEE Journal of the Electron Devices Society, IEEE Electron Devices Society, 2019, 7, 1145-1150Compte-rendu et recension critique d'ouvragefulltext -
High Power AlN/GaN HEMTs with record power-added-efficiency >70% at 40 GHz
Harrouche, Kathia; Kabouche, Riad; Okada, Etienne; et al.IEEE/MTT-S International Microwave Symposium (IMS 2020), Los Angeles, CA, 04-08-2020, 2020 IEEE/MTT-S International Microwave Symposium (IMS), IEEECommunication dans un congrès avec actesfulltext -
High power, high PAE Q-band sub-10 nm barrier thickness AlN/GaN HEMTs
Dogmus, Ezgi; Kabouche, Riad; Linge, Astrid; et al.physica status solidi (a), Wiley, 08-2017, 214; 8, 1600797Compte-rendu et recension critique d'ouvragefulltext -
High voltage GaN-on-silicon with low-trapping up to 1200 V
Tajalli, Alaleh; Abid, Idriss; Kabouche, Riad; et al.International Workshop on Nitride Semiconductors, Kanazawa, 11-11-2018, IWN2018Communication dans un congrès avec actesfulltext -
Importance of buffer configuration in GaN HEMTs for high microwave performance and robustness
Pécheux, Romain; Kabouche, Riad; Dogmus, Ezgi; et al.ESSDERC 2017 - 47th IEEE European Solid-State Device Research Conference (ESSDERC), Leuven, 11-09-2017, IEEEAutre communication scientifique (congrès sans actes - poster - séminaire...) -
InAlGaN/GaN HEMTs at Cryogenic Temperatures
Dogmus, Ezgi; Kabouche, Riad; Lepilliet, sl; et al.Electronics, MDPI, 12-2016, 5; 2, 31Compte-rendu et recension critique d'ouvragefulltext -
[Invited] Current status and challenges of GaN millimeter-wave transistors
Kabouche, Riad; Pecheux, Romain; Zegaoui, Malek; et al.GaN Marathon 2.0, Padova, 18-04-2018Autre communication scientifique (congrès sans actes - poster - séminaire...)fulltext